G40P03D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 35A DFN5*6-8L
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
| Anzahl | Preis |
|---|---|
| 5000+ | 0.32 EUR |
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Technische Details G40P03D5 Goford Semiconductor
Description: MOSFET P-CH 30V 35A DFN5*6-8L, Supplier Device Package: 8-DFN (4.9x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Weitere Produktangebote G40P03D5 nach Preis ab 0.45 EUR bis 1.74 EUR
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G40P03D5 | Hersteller : Goford Semiconductor |
Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V |
auf Bestellung 4955 Stücke: Lieferzeit 10-14 Tag (e) |
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G40P03D5 | Hersteller : Goford Semiconductor |
Description: P-30V,-35A,RD(MAX)<10M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2716 pF @ 15 V |
Produkt ist nicht verfügbar |
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| G40P03D5 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -35A; 48W; DFN5x6-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Power dissipation: 48W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |