G45P40T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 45A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
FET Feature: Standard
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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Technische Details G45P40T Goford Semiconductor
Description: MOSFET, P-CH, 40V,45A,TO-220, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 80W (Tc), FET Feature: Standard, Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V.
Weitere Produktangebote G45P40T nach Preis ab 1.08 EUR bis 1.8 EUR
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G45P40T | Goford Semiconductor |
Description: MOSFET, P-CH, 40V,45A,TO-220 Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 80W (Tc) FET Feature: Standard Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V |
auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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| G45P40T |
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Hersteller: Goford Semiconductor
Description: MOSFET, P-CH, 40V,45A,TO-220
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Description: MOSFET, P-CH, 40V,45A,TO-220
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 14+ | 1.56 EUR |
| 100+ | 1.08 EUR |