G5S12008D Global Power Technology-GPT
Hersteller: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 26.1A TO263
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 26.1A
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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Technische Details G5S12008D Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 26.1A TO263, Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263, Current - Average Rectified (Io): 26.1A, Capacitance @ Vr, F: 550pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io).
Weitere Produktangebote G5S12008D
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G5S12008D | Global Power Technology-GPT |
Description: DIODE SIL CARB 1.2KV 26.1A TO263 Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 Current - Average Rectified (Io): 26.1A Capacitance @ Vr, F: 550pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G5S12008D |
|
Hersteller: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 26.1A TO263
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 26.1A
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Description: DIODE SIL CARB 1.2KV 26.1A TO263
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io): 26.1A
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH