G60N04K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
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Technische Details G60N04K Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 60A; 65W; TO252, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 60A, Power dissipation: 65W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 42nC, Kind of channel: enhancement.
Weitere Produktangebote G60N04K nach Preis ab 0.32 EUR bis 2.01 EUR
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G60N04K | Goford Semiconductor |
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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| G60N04K | GOFORD Semiconductor |
N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252 |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G60N04K |
|
Hersteller: Goford Semiconductor
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.26 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| G60N04K |
|
Hersteller: GOFORD Semiconductor
N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252
N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.35 EUR |
| 15000+ | 0.32 EUR |