G60N10K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.89 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
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Produktbewertung abgeben
Technische Details G60N10K Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; 105W; TO252, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 60A, Power dissipation: 105W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 146nC.
Weitere Produktangebote G60N10K nach Preis ab 0.64 EUR bis 3.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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G60N10K | Goford Semiconductor |
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| G60N10K | GOFORD Semiconductor |
N-CH,60V,60A,RD(max) Less Than 25mOhm at 10V,RD(max) Less Than 30mOhm at 4.5V,VTH 0.8V to 2.5V, TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G60N10K |
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Hersteller: Goford Semiconductor
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.27 EUR |
| 11+ | 2.07 EUR |
| 50+ | 1.56 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.09 EUR |
| G60N10K |
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Hersteller: GOFORD Semiconductor
N-CH,60V,60A,RD(max) Less Than 25mOhm at 10V,RD(max) Less Than 30mOhm at 4.5V,VTH 0.8V to 2.5V, TO-252
N-CH,60V,60A,RD(max) Less Than 25mOhm at 10V,RD(max) Less Than 30mOhm at 4.5V,VTH 0.8V to 2.5V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.64 EUR |

