G65P06K Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.91 EUR |
| 5000+ | 0.87 EUR |
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Technische Details G65P06K Goford Semiconductor
Description: P60V,RD(MAX).
Weitere Produktangebote G65P06K nach Preis ab 0.97 EUR bis 2.2 EUR
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G65P06K | Hersteller : Goford Semiconductor |
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
auf Bestellung 8666 Stücke: Lieferzeit 10-14 Tag (e) |
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