G700P06LL Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details G700P06LL Goford Semiconductor
Description: MOSFET P-CH 60V 5A SOT-23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V, FET Feature: Standard, Power Dissipation (Max): 3.1W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V.
Weitere Produktangebote G700P06LL nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| G700P06LL | Hersteller : GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G700P06LL | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5A; 3.1W; SOT23-6 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Power dissipation: 3.1W Case: SOT23-6 Gate-source voltage: ±20V Mounting: SMD Gate charge: 15.8nC Kind of channel: enhancement |
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