GBJ25D GeneSiC Semiconductor
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Technische Details GBJ25D GeneSiC Semiconductor
Description: 200V 25A GBJ SINGLE PHASE BRIDGE, Packaging: Bulk, Package / Case: 4-SIP, GBJ, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBJ, Part Status: Active, Voltage - Peak Reverse (Max): 200 V, Current - Average Rectified (Io): 25 A, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GBJ25D | Hersteller : GeneSiC Semiconductor |
 Description: 200V 25A GBJ SINGLE PHASE BRIDGEPackaging: Bulk Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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GBJ25D | Hersteller : GeneSiC Semiconductor |
Bridge Rectifiers 200V 25A GBJ Single Phase Bridge Rectifier |
Produkt ist nicht verfügbar |