GBJ35M GeneSiC Semiconductor
auf Bestellung 2156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.59 EUR |
| 10+ | 3.63 EUR |
| 25+ | 3.31 EUR |
| 100+ | 2.9 EUR |
| 200+ | 2.59 EUR |
| 600+ | 2.43 EUR |
| 1000+ | 2.15 EUR |
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Technische Details GBJ35M GeneSiC Semiconductor
Description: 1000V 35A GBJ SINGLE PHASE BRIDG, Packaging: Bulk, Package / Case: 4-SIP, GBJ, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBJ, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 35 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote GBJ35M
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GBJ35M | Hersteller : GeneSiC Semiconductor |
 SINGLE PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Produkt ist nicht verfügbar |
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| GBJ35M | Hersteller : GeneSiC Semiconductor |
Description: 1000V 35A GBJ SINGLE PHASE BRIDG Packaging: Bulk Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |