GBU4D-M3/51 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tray
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Technische Details GBU4D-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A GBU, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A, Current - Average Rectified (Io): 4 A, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBU, Packaging: Tray.
Weitere Produktangebote GBU4D-M3/51
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GBU4D-M3/51 | Hersteller : Vishay General Semiconductor |
Bridge Rectifiers 4A,200V,GPP,INLINE BRIDGE |
Produkt ist nicht verfügbar |