GBU8K-M3/51 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Technische Details GBU8K-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 8A GBU, Packaging: Tray, Package / Case: 4-SIP, GBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBU, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 8 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
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GBU8K-M3/51 | Hersteller : Vishay General Semiconductor |
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GBU8K-M3\51 | Hersteller : Vishay | Bridge Rectifiers 8A,800V,GPP,INLINE BRIDGE |
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GBU8K-M3/51 | Hersteller : VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
Produkt ist nicht verfügbar |