GC02MPS12-220 GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 3.15 EUR |
| 25+ | 2.97 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.59 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GC02MPS12-220 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 12A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 127pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V.
Weitere Produktangebote GC02MPS12-220
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
GC02MPS12-220 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 12A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 127pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
Produkt ist nicht verfügbar |