Technische Details GC280N65F Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 15A, Power dissipation: 33W, Case: TO220F, Gate-source voltage: ±30V, Mounting: THT, Gate charge: 27nC, Kind of channel: enhancement.
Weitere Produktangebote GC280N65F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GC280N65F | GOFORD SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 33W Case: TO220F Gate-source voltage: ±30V Mounting: THT Gate charge: 27nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GC280N65F |
![]() |
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


