GCMX020A120B2B1P SemiQ
Hersteller: SemiQ
Description: MOSFET 2N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 241nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
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Technische Details GCMX020A120B2B1P SemiQ
Description: MOSFET 2N-CH 1200V 102A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 385W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 800V, Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 241nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 20mA.
Weitere Produktangebote GCMX020A120B2B1P nach Preis ab 74.94 EUR bis 96.04 EUR
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GCMX020A120B2B1P | Hersteller : SemiQ |
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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