GCMX020A120B2H2P SemiQ

Description: 1200V, 20M SIC MOSFET FULL BRIDG, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 333W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V, Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 237nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 20mA.