GD05MPS17H GeneSiC Semiconductor
auf Bestellung 3672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.75 EUR |
| 10+ | 7.8 EUR |
| 30+ | 7.44 EUR |
| 120+ | 6.93 EUR |
| 270+ | 6.62 EUR |
| 510+ | 6.41 EUR |
| 1020+ | 6.18 EUR |
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Technische Details GD05MPS17H GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 361pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V.
Weitere Produktangebote GD05MPS17H nach Preis ab 5.56 EUR bis 8.91 EUR
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GD05MPS17H | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1700V 15A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD05MPS17H | Hersteller : GeneSiC SEMICONDUCTOR |
GD05MPS17H THT Schottky diodes |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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