GD1000HFX170P2S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
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Technische Details GD1000HFX170P2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A, Collector current: 1kA, Pulsed collector current: 2kA, Max. off-state voltage: 1.7kV, Technology: Trench FS IGBT, Topology: IGBT half-bridge, Case: P2.0, Semiconductor structure: transistor/transistor, Electrical mounting: screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Gate-emitter voltage: ±20V.