GD1000HFX170P2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A, Case: P2.0, Semiconductor structure: transistor/transistor, Technology: Trench FS IGBT, Type of semiconductor module: IGBT, Mechanical mounting: screw, Electrical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 1kA, Max. off-state voltage: 1.7kV, Pulsed collector current: 2kA, Topology: IGBT half-bridge.