GD100FFY120C5S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 12 Stücke
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Technische Details GD100FFY120C5S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C5 45mm, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Anzahl je Verpackung: 12 Stücke.
Weitere Produktangebote GD100FFY120C5S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GD100FFY120C5S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C5 45mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |