GD100FFY120C5S STARPOWER SEMICONDUCTOR


Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details GD100FFY120C5S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C5 45mm, Semiconductor structure: transistor/transistor, Electrical mounting: Press-in PCB, Type of semiconductor module: IGBT, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 12 Stücke.

Weitere Produktangebote GD100FFY120C5S

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GD100FFY120C5S Hersteller : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH