GD150HFX170C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.7kV, Collector current: 150A, Case: C2 62mm, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Technology: Trench FS IGBT, Mechanical mounting: screw, Anzahl je Verpackung: 12 Stücke.