GD150HFY120C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Pulsed collector current: 300A, Collector current: 150A, Gate-emitter voltage: ±20V, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: C2 62mm, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Anzahl je Verpackung: 60 Stücke.