GD150HFY120C8S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Electrical mounting: FASTON connectors; screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Case: C8 48mm, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 16 Stücke.