GD200FFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C6 62mm, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 10 Stücke.