GD200FFY120C6S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 10 Stücke
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Technische Details GD200FFY120C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C6 62mm, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote GD200FFY120C6S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GD200FFY120C6S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |