 
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 50+ | 4.5 EUR | 
Produktrezensionen
Produktbewertung abgeben
Technische Details GD20MPS12A GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 42A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 737pF @ 1V, 1MHz, Current - Average Rectified (Io): 42A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V. 
Weitere Produktangebote GD20MPS12A nach Preis ab 4.62 EUR bis 9.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | GD20MPS12A | Hersteller : GeneSiC Semiconductor |  1200V 20A SiC Schottky MPS Diode | auf Bestellung 50 Stücke:Lieferzeit 14-21 Tag (e) | 
 | ||||||||||||||||
|   | GD20MPS12A | Hersteller : GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS Anzahl je Verpackung: 1 Stücke | auf Bestellung 1107 Stücke:Lieferzeit 7-14 Tag (e) | 
 | ||||||||||||||||
|   | GD20MPS12A | Hersteller : GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS | auf Bestellung 1107 Stücke:Lieferzeit 14-21 Tag (e) | 
 | ||||||||||||||||
|  | GD20MPS12A | Hersteller : GeneSiC Semiconductor |  SiC Schottky Diodes 1200V 20A TO-220-2 SiC Schottky MPS | auf Bestellung 2646 Stücke:Lieferzeit 10-14 Tag (e) | 
 | ||||||||||||||||
|   | GD20MPS12A | Hersteller : GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 42A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | auf Bestellung 2283 Stücke:Lieferzeit 10-14 Tag (e) | 
 | ||||||||||||||||
|   | GD20MPS12A | Hersteller : GeneSiC Semiconductor |  1200V 20A SiC Schottky MPS Diode | Produkt ist nicht verfügbar |