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Technische Details GD20MPS12A GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 42A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 737pF @ 1V, 1MHz, Current - Average Rectified (Io): 42A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote GD20MPS12A nach Preis ab 5.62 EUR bis 11.75 EUR
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GD20MPS12A | GeneSiC Semiconductor |
 1200V 20A SiC Schottky MPS Diode |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS |
auf Bestellung 1098 Stücke: Lieferzeit 14-21 Tag (e) |
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GD20MPS12A | GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 20A TO-220-2 SiC Schottky MPS |
auf Bestellung 2646 Stücke: Lieferzeit 10-14 Tag (e) |
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GD20MPS12A | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 42A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
auf Bestellung 2283 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD20MPS12A |
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Hersteller: GeneSiC Semiconductor
1200V 20A SiC Schottky MPS Diode
1200V 20A SiC Schottky MPS Diode
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 5.62 EUR |
| GD20MPS12A |
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Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 1098 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.56 EUR |
| 13+ | 7.06 EUR |
| 25+ | 6.76 EUR |
| 50+ | 6.5 EUR |
| 100+ | 6.28 EUR |
| 250+ | 6.01 EUR |
| 1000+ | 5.87 EUR |
| GD20MPS12A |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 20A TO-220-2 SiC Schottky MPS
SiC Schottky Diodes 1200V 20A TO-220-2 SiC Schottky MPS
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.5 EUR |
| 10+ | 10.31 EUR |
| 25+ | 9.84 EUR |
| 100+ | 9.21 EUR |
| 250+ | 8.82 EUR |
| 500+ | 8.54 EUR |
| 1000+ | 8.27 EUR |
| GD20MPS12A |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 2283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.75 EUR |
| 10+ | 10.53 EUR |
| 25+ | 10.07 EUR |
| 100+ | 9.42 EUR |
| 250+ | 9.02 EUR |
| 500+ | 8.72 EUR |
| 1000+ | 8.45 EUR |