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GD25B64EWIGR GigaDevice Semiconductor (HK) Limited

2023__Gde.pdf Hersteller: GigaDevice Semiconductor (HK) Limited
Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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25+ 1.92 EUR
50+ 1.91 EUR
100+ 1.71 EUR
500+ 1.68 EUR
1000+ 1.61 EUR
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Technische Details GD25B64EWIGR GigaDevice Semiconductor (HK) Limited

Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (5x6), Part Status: Active, Write Cycle Time - Word, Page: 70µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 8M x 8.

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GD25B64EWIGR Hersteller : GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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GD25B64EWIGR GD25B64EWIGR Hersteller : GigaDevice GigaDevice_Product_Selection_Guide-1947349.pdf NOR Flash
Produkt ist nicht verfügbar