GD25D10CEIGR GigaDevice Semiconductor (HK) Limited
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1MBIT SPI/DUAL 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 4ms
Memory Interface: SPI - Dual I/O
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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Technische Details GD25D10CEIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1MBIT SPI/DUAL 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 100 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (2x3), Write Cycle Time - Word, Page: 50µs, 4ms, Memory Interface: SPI - Dual I/O, Memory Organization: 128K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote GD25D10CEIGR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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GD25D10CEIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1MBIT SPI/DUAL 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
GD25D10CEIGR | GigaDevice |
NOR Flash 1Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GD25D10CEIGR |
|
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1MBIT SPI/DUAL 8USON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 4ms
Memory Interface: SPI - Dual I/O
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1MBIT SPI/DUAL 8USON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 4ms
Memory Interface: SPI - Dual I/O
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD25D10CEIGR |
|
Hersteller: GigaDevice
NOR Flash 1Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R
NOR Flash 1Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH