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GD25LE128ESIGR

GD25LE128ESIGR GigaDevice Semiconductor (HK) Limited

2023__Gde.pdf Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 128MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
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Technische Details GD25LE128ESIGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 128MBIT SPI/QUAD 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.209", 5.30mm Width), Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Part Status: Active, Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 16M x 8.

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GD25LE128ESIGR GD25LE128ESIGR Hersteller : GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 128MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
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GD25LE128ESIGR GD25LE128ESIGR Hersteller : GigaDevice gd25wq128e_rev1_2_20210926-1825480.pdf NOR Flash
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Im Einkaufswagen  Stück im Wert von  UAH