GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH
Packaging: Tape & Reel (TR)
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Produktrezensionen
Produktbewertung abgeben
Technische Details GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH, Packaging: Tape & Reel (TR), Memory Organization: 16M x 8, Access Time: 6 ns, Memory Interface: SPI - Quad I/O, QPI, Write Cycle Time - Word, Page: 60µs, 2.4ms, Supplier Device Package: 8-FO-USON8 (3x3), Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR (SLC), Voltage - Supply: 1.65V ~ 2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 128Mbit, Mounting Type: Surface Mount, Package / Case: 8-XDFN Exposed Pad.
Weitere Produktangebote GD25LE128EXHIGR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GD25LE128EXHIGR | GigaDevice Semiconductor (HK) Limited |
Description: SERIAL NOR FLASH Memory Organization: 16M x 8 Access Time: 6 ns Memory Interface: SPI - Quad I/O, QPI Write Cycle Time - Word, Page: 60µs, 2.4ms Supplier Device Package: 8-FO-USON8 (3x3) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 8-XDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GD25LE128EXHIGR |
|
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: SERIAL NOR FLASH
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH