GD25Q128EYIGR GigaDevice Semiconductor (HK) Limited
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 16M x 8
Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 16M x 8
auf Bestellung 2823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.45 EUR |
10+ | 3.15 EUR |
25+ | 3.06 EUR |
50+ | 3.05 EUR |
100+ | 2.72 EUR |
500+ | 2.67 EUR |
1000+ | 2.56 EUR |
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Technische Details GD25Q128EYIGR GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 16M x 8.
Weitere Produktangebote GD25Q128EYIGR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GD25Q128EYIGR | Hersteller : GIGADEVICE |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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GD25Q128EYIGR | Hersteller : GigaDevice Semiconductor (HK) Limited |
Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 |
Produkt ist nicht verfügbar |
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GD25Q128EYIGR | Hersteller : GigaDevice | NOR Flash |
Produkt ist nicht verfügbar |
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GD25Q128EYIGR | Hersteller : GIGADEVICE |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V |
Produkt ist nicht verfügbar |