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GD25Q32EWIGR

GD25Q32EWIGR GigaDevice Semiconductor (HK) Limited

2023__Gde.pdf Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 4M x 8
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Technische Details GD25Q32EWIGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 32MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (5x6), Part Status: Active, Write Cycle Time - Word, Page: 70µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 4M x 8.

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GD25Q32EWIGR GD25Q32EWIGR Hersteller : GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 4M x 8
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GD25Q32EWIGR GD25Q32EWIGR Hersteller : GigaDevice 2023__Gde.pdf NOR Flash
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Im Einkaufswagen  Stück im Wert von  UAH