
GD25S512MDYIGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 6.71 EUR |
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Technische Details GD25S512MDYIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 512MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Clock Frequency: 104 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Part Status: Active, Write Cycle Time - Word, Page: 50µs, 2.4ms, Memory Interface: SPI - Quad I/O, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote GD25S512MDYIGR nach Preis ab 8.43 EUR bis 10.65 EUR
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GD25S512MDYIGR | Hersteller : GigaDevice Semiconductor (HK) Limited |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 9364 Stücke: Lieferzeit 10-14 Tag (e) |
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