GD2X100MPS06N

GD2X100MPS06N GeneSiC SEMICONDUCTOR


GD2X100MPS06N.pdf
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Max. forward impulse current: 0.44kA
Kind of package: tube
auf Bestellung 73 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GD2X100MPS06N GeneSiC SEMICONDUCTOR

Description: DIODE MOD SIC 650V 108A SOT227, Current - Reverse Leakage @ Vr: 5 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 108A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.

Weitere Produktangebote GD2X100MPS06N nach Preis ab 65.33 EUR bis 78.41 EUR

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GD2X100MPS06N GD2X100MPS06N GeneSiC Semiconductor GD2X100MPS06N.pdf Description: DIODE MOD SIC 650V 108A SOT227
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.58 EUR
10+71.2 EUR
25+68.8 EUR
100+65.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GD2X100MPS06N GD2X100MPS06N GeneSiC Semiconductor GD2X100MPS06N-2308012.pdf Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
1+78.41 EUR
10+71.95 EUR
30+69.56 EUR
100+66.05 EUR
250+65.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GD2X100MPS06N GD2X100MPS06N.pdf
GD2X100MPS06N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 108A SOT227
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.58 EUR
10+71.2 EUR
25+68.8 EUR
100+65.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GD2X100MPS06N GD2X100MPS06N-2308012.pdf
GD2X100MPS06N
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.41 EUR
10+71.95 EUR
30+69.56 EUR
100+66.05 EUR
250+65.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH