GD2X100MPS06N GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTORCategory: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.44kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
Max. load current: 231A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 57.16 EUR |
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Technische Details GD2X100MPS06N GeneSiC SEMICONDUCTOR
Description: DIODE MOD SIC 650V 108A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 108A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 5 µA @ 650 V.
Weitere Produktangebote GD2X100MPS06N nach Preis ab 45.78 EUR bis 120.72 EUR
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GD2X100MPS06N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 108A x2 Case: SOT227B Max. forward voltage: 1.8V Max. forward impulse current: 0.44kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Reverse recovery time: 10ns Kind of package: tube Max. load current: 231A |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Diode Schottky 650V 216A 4-Pin SOT-227 Tube |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Diode Schottky 650V 216A 4-Pin SOT-227 Tube |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SIC 650V 108A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 108A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 5 µA @ 650 V |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Schottky Diode |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
650V 200A SOT-227 SiC Schottky MPS |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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| GD2X100MPS06N | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |