GD2X100MPS06N GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Max. forward impulse current: 0.44kA
Kind of package: tube
Produktrezensionen
Produktbewertung abgeben
Technische Details GD2X100MPS06N GeneSiC SEMICONDUCTOR
Description: DIODE MOD SIC 650V 108A SOT227, Current - Reverse Leakage @ Vr: 5 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 108A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GD2X100MPS06N nach Preis ab 65.33 EUR bis 78.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GD2X100MPS06N | GeneSiC Semiconductor |
Description: DIODE MOD SIC 650V 108A SOT227Current - Reverse Leakage @ Vr: 5 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 108A (DC) Diode Configuration: 2 Independent Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
GD2X100MPS06N | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GD2X100MPS06N |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 108A SOT227
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MOD SIC 650V 108A SOT227
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 77.58 EUR |
| 10+ | 71.2 EUR |
| 25+ | 68.8 EUR |
| 100+ | 65.33 EUR |
| GD2X100MPS06N |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 78.41 EUR |
| 10+ | 71.95 EUR |
| 30+ | 69.56 EUR |
| 100+ | 66.05 EUR |
| 250+ | 65.89 EUR |

