GD2X100MPS12N GeneSiC Semiconductor
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 135.04 EUR |
| 10+ | 124.45 EUR |
| 30+ | 120.47 EUR |
| 100+ | 117.6 EUR |
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Technische Details GD2X100MPS12N GeneSiC Semiconductor
Description: 1200V 200A SOT-227 SIC SCHOTTKY, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 136A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V.
Weitere Produktangebote GD2X100MPS12N nach Preis ab 145.92 EUR bis 145.92 EUR
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GD2X100MPS12N | Hersteller : GeneSiC Semiconductor |
 Description: 1200V 200A SOT-227 SIC SCHOTTKYPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 136A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD2X100MPS12N | Hersteller : GeneSiC Semiconductor |
1200V 200A SOT-227 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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| GD2X100MPS12N | Hersteller : GeneSiC Semiconductor |
1200V 200A SOT-227 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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| GD2X100MPS12N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns Anzahl je Verpackung: 150 Stücke |
Produkt ist nicht verfügbar |
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| GD2X100MPS12N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |