Technische Details GD2X100MPS12N GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 136A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 136A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V.
Weitere Produktangebote GD2X100MPS12N nach Preis ab 117.04 EUR bis 165.43 EUR
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GD2X100MPS12N | GeneSiC Semiconductor |
 Diode Schottky 1.2KV 272A 4-Pin SOT-227 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X100MPS12N | GeneSiC Semiconductor |
Description: DIODE MOD SIC 1200V 136A SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 136A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD2X100MPS12N |
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Hersteller: GeneSiC Semiconductor
Diode Schottky 1.2KV 272A 4-Pin SOT-227
Diode Schottky 1.2KV 272A 4-Pin SOT-227
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 125.63 EUR |
| 30+ | 117.04 EUR |
| GD2X100MPS12N |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 165.43 EUR |
| 10+ | 152.46 EUR |
| 25+ | 147.56 EUR |