GD2X150MPS06N Navitas Semiconductor, Inc.
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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Technische Details GD2X150MPS06N Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 650V 150A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 150A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Weitere Produktangebote GD2X150MPS06N nach Preis ab 89.16 EUR bis 104.09 EUR
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Diode Array 2 Independent 650 V 150A (DC) Chassis Mount SOT-227-4, miniBLOC Група товару: Діоди та діодні збірки Од. вим: шт |
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| GD2X150MPS06N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 150Ax2; SOT227B; screw Technology: SiC Max. off-state voltage: 650V Load current: 150A x2 Semiconductor structure: double independent Features of semiconductor devices: MPS Case: SOT227B Max. forward voltage: 1.8V Max. load current: 440A Max. forward impulse current: 0.84kA Kind of package: tube Reverse recovery time: 10ns Type of semiconductor module: diode Electrical mounting: screw Mechanical mounting: screw |
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