GD300HFX170C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: C2 62mm, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 1.7kV, Technology: Trench FS IGBT, Electrical mounting: FASTON connectors; screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 12 Stücke.