GD300HFX170C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Topology: IGBT half-bridge, Technology: Trench FS IGBT, Case: C2 62mm, Collector current: 300A, Mechanical mounting: screw, Pulsed collector current: 600A, Max. off-state voltage: 1.7kV, Electrical mounting: FASTON connectors; screw, Type of module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 12 Stücke.