GD300HFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: C6 62mm, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Electrical mounting: Press-in PCB; screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 10 Stücke.