GD300SGY120C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V, Case: C2 62mm, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Electrical mounting: screw, Type of semiconductor module: IGBT, Topology: single transistor, Mechanical mounting: screw, Semiconductor structure: single transistor.