Produkte > STARPOWER SEMICONDUCTOR > GD35PJY120F2S

GD35PJY120F2S STARPOWER SEMICONDUCTOR

Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Semiconductor structure: diode/transistor
Case: F2.0
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge

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Technische Details GD35PJY120F2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0, Semiconductor structure: diode/transistor, Case: F2.0, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 35A, Pulsed collector current: 70A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge.