GD450HTY120C7S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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Technische Details GD450HTY120C7S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7, Mechanical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge x3; NTC thermistor, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 900A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Case: C7, Electrical mounting: Press-in PCB; screw.