GD50FSY120L3S STARPOWER
Hersteller: STARPOWERDescription: STARPOWER - GD50FSY120L3S - IGBT-Modul, Sechserpack, 100 A, 1.7 V, 380 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 1.2kV
rohsCompliant: YES
Verlustleistung: 380W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.7V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 100A
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details GD50FSY120L3S STARPOWER
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: L3.2, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 100A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge OE output; NTC thermistor, Type of semiconductor module: IGBT, Anzahl je Verpackung: 16 Stücke.
Weitere Produktangebote GD50FSY120L3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GD50FSY120L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor Type of semiconductor module: IGBT Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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| GD50FSY120L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |