Produkte > STARPOWER SEMICONDUCTOR > GD50FSY120L3S

GD50FSY120L3S STARPOWER SEMICONDUCTOR

Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw

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Technische Details GD50FSY120L3S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge OE output; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 50A, Case: L3.2, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw.