GD5F1GQ4UFYIGR GigaDevice
Hersteller: GigaDevice
FLASH - NAND Memory IC 1Gb (128M x 8) SPI - Quad I/O 120MHz 8-WSON (6x8) Група товару: Мікросхеми пам'яті Од. вим: шт
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Technische Details GD5F1GQ4UFYIGR GigaDevice
Description: IC FLASH 1GBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND, Clock Frequency: 120 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Write Cycle Time - Word, Page: 700µs, Memory Interface: SPI - Quad I/O, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote GD5F1GQ4UFYIGR
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GD5F1GQ4UFYIGR | Hersteller : GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UFYIGR | Hersteller : GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UFYIGR | Hersteller : GigaDevice |
NAND Flash 1Gbit SPI NAND Flash /3.3V /WSON 8*6 /Industrial(-40? to +85?) /T&R |
Produkt ist nicht verfügbar |