GD600HFX170C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Case: C6 62mm, Electrical mounting: Press-in PCB; screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 10 Stücke.