Produkte > STARPOWER SEMICONDUCTOR > GD900HFY120P1S

GD900HFY120P1S STARPOWER SEMICONDUCTOR

Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw

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Technische Details GD900HFY120P1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 900A, Case: P1.0, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.8kA, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw.