GF1D/1754 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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Technische Details GF1D/1754 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA, Packaging: Tape & Reel (TR).
Weitere Produktangebote GF1D/1754
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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GF1D/1754 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GF1D/1754 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH