GF1KHE3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STANDARD 800V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.49 EUR |
| 3000+ | 0.44 EUR |
| 4500+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GF1KHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote GF1KHE3_A/H nach Preis ab 0.45 EUR bis 1.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GF1KHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO214BAPackaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
GF1KHE3_A/H | Hersteller : Vishay General Semiconductor |
Rectifiers 800V 30Amp AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
Produkt ist nicht verfügbar |