GHXS015A120S-D3 SemiQ
Hersteller: SemiQDescription: DIODE SCHOT SBD 1200V 15A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 70.21 EUR |
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Technische Details GHXS015A120S-D3 SemiQ
Description: DIODE SCHOT SBD 1200V 15A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 15A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
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GHXS015A120S-D3 | Hersteller : SemiQ |
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |