GHXS015A120S-D3 SemiQ
Hersteller: SemiQ
Description: DIODE SCHOT SBD 1200V 15A SOT227
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details GHXS015A120S-D3 SemiQ
Description: DIODE SCHOT SBD 1200V 15A SOT227, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 15A, Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GHXS015A120S-D3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
GHXS015A120S-D3 | SemiQ |
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GHXS015A120S-D3 |
|
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)