auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.87 EUR |
| 20+ | 42.42 EUR |
| 50+ | 41.08 EUR |
| 100+ | 39.76 EUR |
| 200+ | 37.1 EUR |
| 500+ | 34.11 EUR |
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Technische Details GHXS050A060S-D3 SemiQ
Description: DIODE SCHOTT SBD 600V 50A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Weitere Produktangebote GHXS050A060S-D3 nach Preis ab 92.14 EUR bis 92.14 EUR
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GHXS050A060S-D3 | Hersteller : SemiQ |
 Description: DIODE SCHOTT SBD 600V 50A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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