GHXS060B120S-D3 SemiQ
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Technische Details GHXS060B120S-D3 SemiQ
Description: DIODE MOD SIC 1200V 161A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 161A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
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|---|---|---|---|---|---|
|
GHXS060B120S-D3 | SemiQ |
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A |
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Im Einkaufswagen Stück im Wert von UAH |
| GHXS060B120S-D3 |
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Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



