GI501-E3/54 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1400+ | 0.29 EUR |
2800+ | 0.26 EUR |
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Technische Details GI501-E3/54 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 28pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote GI501-E3/54 nach Preis ab 0.33 EUR bis 1.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GI501-E3/54 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 5503 Stücke: Lieferzeit 10-14 Tag (e) |
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GI501-E3/54 | Hersteller : Vishay General Semiconductor | Rectifiers 100 Volt 3.0 Amp 100 Amp IFSM |
auf Bestellung 4287 Stücke: Lieferzeit 14-28 Tag (e) |
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GI501-E3/54 | Hersteller : Vishay Semiconductors | Rectifiers 100 Volt 3.0 Amp 100 Amp IFSM |
auf Bestellung 8358 Stücke: Lieferzeit 14-28 Tag (e) |
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GI501-E3/54 | Hersteller : VISHAY | GI501-E3/54 THT universal diodes |
Produkt ist nicht verfügbar |