GKI04031 Sanken
Hersteller: Sanken
Description: MOSFET N-CH 40V 17A 8DFN
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
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Technische Details GKI04031 Sanken
Description: MOSFET N-CH 40V 17A 8DFN, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Power Dissipation (Max): 3.1W (Ta), 77W (Tc).
Weitere Produktangebote GKI04031
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
GKI04031 | Sanken |
Description: MOSFET N-CH 40V 17A 8DFNRds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Power Dissipation (Max): 3.1W (Ta), 77W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GKI04031 |
![]() |
Hersteller: Sanken
Description: MOSFET N-CH 40V 17A 8DFN
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Description: MOSFET N-CH 40V 17A 8DFN
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

