GL41B-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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Technische Details GL41B-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote GL41B-E3/96 nach Preis ab 0.18 EUR bis 0.79 EUR
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GL41B-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V Type of diode: rectifying Max. off-state voltage: 0.1kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB; MELF plastic Mounting: SMD Leakage current: 50µA Kind of package: 7 inch reel Features of semiconductor devices: glass passivated Capacitance: 8pF Max. forward voltage: 1.1V Load current: 1A Quantity in set/package: 1500pcs. |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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GL41B-E3/96 | Vishay General Semiconductor |
Rectifiers 1 Amp 100 Volt 30 Amp IFSM |
auf Bestellung 2366 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41B-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
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| GL41B-E3/96 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; MELF plastic
Mounting: SMD
Leakage current: 50µA
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward voltage: 1.1V
Load current: 1A
Quantity in set/package: 1500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; MELF plastic
Mounting: SMD
Leakage current: 50µA
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward voltage: 1.1V
Load current: 1A
Quantity in set/package: 1500pcs.
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 240+ | 0.3 EUR |
| 288+ | 0.25 EUR |
| 311+ | 0.23 EUR |
| 355+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| GL41B-E3/96 |
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Hersteller: Vishay General Semiconductor
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.73 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.23 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |