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Technische Details GL41B-E3/96 Vishay
Description: DIODE GEN PURP 100V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote GL41B-E3/96 nach Preis ab 0.11 EUR bis 1.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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GL41B-E3/96 | Vishay |
 Diode Switching 100V 1A 2-Pin DO-213AB T/R |
auf Bestellung 4814 Stücke: Lieferzeit 14-21 Tag (e) |
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GL41B-E3/96 | Vishay |
Diode Switching 100V 1A 2-Pin DO-213AB T/R |
auf Bestellung 4814 Stücke: Lieferzeit 14-21 Tag (e) |
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GL41B-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41B-E3/96 | Vishay General Semiconductor |
Rectifiers 1 Amp 100 Volt 30 Amp IFSM |
auf Bestellung 2366 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41B-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
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GL41B-E3/96 | Vishay |
Diode Switching 100V 1A 2-Pin DO-213AB T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GL41B-E3/96 |
|
Hersteller: Vishay
Diode Switching 100V 1A 2-Pin DO-213AB T/R
Diode Switching 100V 1A 2-Pin DO-213AB T/R
auf Bestellung 4814 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 827+ | 0.21 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay
Diode Switching 100V 1A 2-Pin DO-213AB T/R
Diode Switching 100V 1A 2-Pin DO-213AB T/R
auf Bestellung 4814 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 579+ | 0.3 EUR |
| 820+ | 0.2 EUR |
| 827+ | 0.19 EUR |
| 910+ | 0.17 EUR |
| 1128+ | 0.13 EUR |
| 1198+ | 0.11 EUR |
| 3000+ | 0.11 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.36 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
Rectifiers 1 Amp 100 Volt 30 Amp IFSM
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.27 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 27+ | 0.8 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| GL41B-E3/96 |
|
Hersteller: Vishay
Diode Switching 100V 1A 2-Pin DO-213AB T/R
Diode Switching 100V 1A 2-Pin DO-213AB T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 1.74 EUR |